Process applied to semiconductor

ABSTRACT

A process applied to grinding, dicing, and/or stacking semiconductors is disclosed. One feature of the process is that after transparent material is stuck on its active surface, a semiconductor is ground from another surface thereof to become thinner, then the semiconductor is diced, by taking advantage of transparency of the transparent material, from its active surface, to obtain at least one smaller semiconductor unit such as die/dice or chip(s). Another feature is that the transparent material remains sticking to the active surface of the die by an adhesion layer until the die is attached to a carrier or another die, and then the transparent material and the adhesion layer are removed by taking advantage of a function of the adhesion layer: receiving a ray to lose adhesion between it and the active surface. Preferably the ray reaches the adhesion layer via the transparent material stuck on the active surface of the die.

FIELD OF THE INVENTION

The present invention relates to grinding and/or dividing semiconductor,particularly to attaching and/or stacking at least one ground and/ordivided semiconductor onto a device carrier, and specifically relates toattaching and/or stacking a wafer onto a device carrier after grindingand/or dividing the wafer.

BACKGROUND OF THE INVENTION

It is a trend for IC or semiconductor industries to minimize the size ofcomponents. For example, each of multiple chips to be stackedconventionally according to U.S. Pat. No. 5,793,108 must be tinned to athickness of 2˜4 mils.

Conventional processes for thinning a chip, such as those disclosed inU.S. Pat. Nos. 6,527,627-6,159,071, include typical steps as shown inFIGS. 1 a-1 f∘In FIG. 1 a, tape 3 is stuck onto the front surface 2 (thesurface with bonding pad 6 thereon) of wafer 1, so that the back surface4 of wafer 1 may be ground by grinding machine 30 (as shown in FIG. 1 b)to have a thinner wafer 11 (as shown in FIG. 1 c). Subsequently a frame5 to be used in dividing wafer is stuck onto the back surface 14 ofthinner wafer 11 (as shown in FIG. 1 d), and the tape 3 on the frontsurface 2 of thinner wafer 11 is removed thereafter (as shown in FIG. 1e) so that thinner wafer 11 can be divided (or diced) by sawing machine40 (as shown in FIG. 1 f).

Thinner wafer 11, obtained by grinding according to the conventionalprocesses as described above, is always subjected to warpage (as shownin FIG. 2) due to stress residue resulting from grinding, bringingdifficulty and trouble for subsequent steps, leading to vulnerability tocrack of thinner wafer 11. Furthermore, the chip or die 21 (as shown inFIG. 3) obtained from dividing thinner wafer 11, being so thin, alwaystends to be subjected to crack 8 when picked up (e.g., picked up by apick-up head 50 as shown in FIG. 3) during the process of Die Bond inwhich the chip (or die) 21 is moved to substrate (as shown in FIG. 4).The chip (or die) 21 is also subjected to crack 8 even when it is placedon substrate 7 (also can be seen from FIG. 4).

In order to solve the poor quality problem resulting from thinner wafer,U.S. Pat. No. 6,264,535 disclosed a technology as shown in FIGS. 5 a-5e. Referring to FIGS. 5 a-5 e (based on the technology according to U.S.Pat. No. 6,264,535), after front surface 2 of wafer 1 is sawn (by sawingmachine 40) to have recesses 9 (not sawn to bottom), tape 3 is stuckonto front surface 2, and back surface 4 of wafer 1 is ground bygrinding machine 30, thereby a group of separated dice 21 are obtained,and frame 12 is then stuck onto back surface 4 of dice 21, subsequentlytape 3 is removed from the front surface of the dice 21. Although theprocess according to U.S. Pat. No. 6,264,535 may likely more or lessease the problem of wafer crack resulting from thinning a wafer, it issubject to much complication (e.g., plural times of sticking tape andframe, etc), and incurs higher cost, not to mention that it is not forsolving the problem of crack of thinner die inherent in the die bondingprocess thereafter. Further reference is made now with respect to JPpatent 2003059871 which is for solving similar problem. According to JPpatent 2003059871, a reinforced thin film is stuck to the tape used ingrinding a wafer, and the thin film is reinforced by a support layermade of thermo-softening resin with specific storage elasticity.Although the reinforced structure according to JP patent 2003059871might more or less provide some usefulness in resolving the problem, itrequires using specific material, resulting in higher cost and morecomplication. Still further reference is made now with respect to JPpatent 11265928 which is for solving similar problem. According to JPpatent 11265928, a wafer to be polished is stuck onto a surface of aspecific plate, where the coarseness of the surface is controlled to bein a specific range. The technology according to JP patent 11265928,even if useful, to some extent, for solving the problem inherent inthinning a wafer, is not necessarily helpful to the reduction of processdifficulty and product failure rate in the steps following the processof thinning a wafer. In view of the fact no ideal solution has ever comeup, the present invention not only develops a process for relatedindustries to eliminate or reduce negative effect and/or product failurerate resulting from thinning (e.g., grinding) and/or dividing a wafer,but also provides efficacy of simplification and benefit of loweringcost for the process following thinning and/or dividing a wafer.

SUMMARY OF THE INVENTION

An object of the present invention is to eliminate or reduce negativeeffect incurred on the quality of semiconductor product by the processof thinning a semiconductor.

Another object of the present invention is to eliminate or reducenegative effect incurred on the quality of semiconductor product by theprocess of dividing a semiconductor.

A further object of the present invention is to eliminate or reduceproduct failure rate in the process (e.g., Die Bonding, Die Stacking)following thinning and/or dividing a semiconductor.

Another further object of the present invention is to provide efficacyof simplification and benefit of lowering cost for the process followingthinning and/or dividing a wafer.

The process provided according to the present invention is for applyingto a semiconductor including an active surface and an inactive surface,wherein the distance between the active surface and the inactive surfacedefines an initial thickness of the semiconductor. One aspect of theprocess comprises: sticking transparent material (e.g., glass, plastic,etc) to the active surface of the semiconductor; grinding thesemiconductor from the inactive surface thereof to obtain a new inactivesurface of the semiconductor, with the distance between the new inactivesurface and the active surface smaller than the initial thickness (e.g.,equal to a desired die thickness); and applying a dividing step to thesemiconductor via the transparent material (e.g., applying a sawingmachine directed toward the transparent material to cut thesemiconductor) to obtain at least a first die, wherein the first dieincludes an active surface and an inactive surface, the active surfaceof the first die is part of the active surface of the semiconductor, theinactive surface of the first die is part of the new inactive surface ofthe semiconductor, and the active surface of the first die has at leastpart of the transparent material thereon.

One way to stick the transparent material to the active surface of thesemiconductor, is that one type of sticking material is spread betweenthe transparent material and the active surface of the semiconductor,i.e., the transparent material and/or the active surface of thesemiconductor are/is coated with one type of sticking material, whereinthe sticking material is so characterized as to lose capability ofsticking to the active surface of the semiconductor when receiving onetype of light (e.g., ultraviolet light). By means of transparency of thetransparent material, it is assured the type of light can easily reachthe sticking material which is between the transparent material and theactive surface of the semiconductor, i.e., the type of light can easilyreach the sticking material which is between the transparent materialand the active surface of the first die, thereby the type of light makesthe sticking material lose capability of sticking to the active surfaceof the semiconductor, i.e., the type of light makes the stickingmaterial lose capability of sticking to the active surface of the firstdie, thus the transparent material and the sticking material can beeasily removed from the first die. For example, moving the first dietogether with the transparent material onto a device carrier, with theinactive surface of the first die sticking to the device carrier, thetype of light can pass the transparent material to reach the stickingmaterial, and make the sticking material lose the capability of stickingto the active surface of the first die, thereby the transparent materialand the sticking material can be conveniently removed from the firstdie, with the first die still on (sticking to) the device carrier.

The sticking material according to the present invention preferablyincludes a first glue layer, a second glue layer, and a film layer,wherein the first glue layer contacts the transparent material, thesecond glue layer contacts the active surface of the semiconductor, thefilm layer is between the first glue layer and the second glue layer,both the film layer and the first glue layer are capable of letting thetype of light pass therethrough; the second glue layer, in response tothe type of light, makes the sticking material lose capability ofsticking to the active surface of the semiconductor. For example, thesecond glue layer is UV glue (ultraviolet-ray glue), and the type oflight is ultraviolet ray.

The dividing step according to the present invention preferablycomprises: recognizing via the transparent material at least a line onthe active surface of the semiconductor; and dividing the semiconductoraccording to the line.

If the transparent material according to the present invention is a typeof hard material, it can be better for supporting or carrying thin die,thus significantly avoiding the crack of thin die.

The number of die/dice obtained from the dividing step according to thepresent invention, is not limited to one, and may be more than one. Forbetter description, let another one among the obtained plural dicecalled “second die”. Obviously the second die also includes an activesurface and an inactive surface, wherein the active surface of thesecond die is part of the active surface of the semiconductor, theinactive surface of the second die is part of the new inactive surfaceof the semiconductor, and the active surface of the second die also hasat least part of the transparent material thereon. Thus the processaccording to the present invention may further comprise: obtaining atleast a second die by the dividing step, the second die including anactive surface and an inactive surface, the active surface of the seconddie being part of the active surface of the semiconductor, the inactivesurface of the second die being part of the new inactive surface of thesemiconductor, the active surface of the second die having at least partof the transparent material thereon; stacking the second die to thefirst die, i.e., sticking the inactive surface of the second die to theactive surface of the first die (to form a stack of two or more dice);letting the type of light pass the transparent material to reach thesticking material which is between the transparent material and thesecond die, thereby making the sticking material lose the capability ofsticking to the second die; and removing the transparent material andthe sticking material from the second die.

The process may preferably further comprise: before connecting the firstdie to the device carrier, spreading an adhesive onto at least oneselected from between a surface of the device carrier and the inactivesurface of the first die, i.e., coating a surface of the device carrierand/or the inactive surface of the first die with an adhesive; andbefore stacking the second die to the first die, spreading an adhesiveonto at least one part selected from between the inactive surface of thesecond die and the active surface of the first die, i.e., coating theinactive surface of the second die and/or the active surface of thefirst die with an adhesive. The adhesive used in the process includes atleast one type of material selected from between silver paste,nonconductive paste, and B-stage paste, i.e., the adhesive includessilver paste and/or nonconductive paste and/or B-stage paste.

According to the process provided by the present invention, in case theadhesive is B-stage paste, heat is necessary for raising the temperatureof the B-stage paste, thereby making the B-stage paste have adhesioncapability. Preferably, before heat is applied to the B-stage paste, thefirst die is stuck to the device carrier via the B-stage paste, and theinactive surface of the second die is stuck to the active surface of thefirst die via the B-stage paste.

Another aspect of the process provided according to the presentinvention comprises: sticking transparent material to an active surfaceof a semiconductor; grinding the semiconductor from an inactive surfaceof the semiconductor to obtain a new inactive surface of thesemiconductor, the distance between the new inactive surface and theactive surface being smaller than an initial thickness of thesemiconductor or equal to a desired die thickness; coating the newinactive surface of the semiconductor with B-stage paste; applying adividing step to the semiconductor via the transparent material toobtain a first die (or smaller semiconductor, or plural dice, or smallerchips), wherein the first die includes an active surface and an inactivesurface, the active surface of the first die is part of the activesurface of the semiconductor, the inactive surface of the first die ispart of the new inactive surface of the semiconductor, the activesurface of the first die has at least part of the transparent materialthereon, and the inactive surface of the first die has at least part ofthe B-stage paste thereon; placing the first die together with thetransparent material on a device carrier, with the inactive surface ofthe first die connecting the device carrier via the B-stage paste;providing heat to raise the temperature of the B-stage paste, so thatthe B-stage paste becomes capable of sticking the inactive surface ofthe first die to the device carrier; letting the type of light pass thetransparent material to reach the sticking material, so that thesticking material loses capability of sticking to the active surface ofthe first die; and removing the transparent material and the stickingmaterial from the first die.

As the number of die/dice obtained from the dividing step is not limitedto one, the above process may further comprise: obtaining at least asecond die by the dividing step, wherein the second die includes anactive surface and an inactive surface, the active surface of the seconddie is part of the active surface of the semiconductor, the inactivesurface of the second die is part of the new inactive surface of thesemiconductor, the active surface of the second die has at least part ofthe transparent material thereon, and the inactive surface of the seconddie has at least part of the B-stage paste thereon; before providingheat to raise the temperature of the B-stage paste on the inactivesurface of the first die, letting the inactive surface of the second dieconnect the active surface of the first die via the B-stage paste;letting the type of light pass the transparent material to reach thesticking material which is between the transparent material and thesecond die, so that the sticking material loses capability of stickingto the active surface of the second die; and removing the transparentmaterial and the sticking material from the second die. The step ofletting the inactive surface of the second die connect the activesurface of the first die via the B-stage paste, is not necessarilybefore providing heat to raise the temperature of the B-stage paste onthe inactive surface of the first die. But in case the step of lettingthe inactive surface of the second die connect the active surface of thefirst die via the B-stage paste is not before providing heat to raisethe temperature of the B-stage paste on the inactive surface of thefirst die, a second time of providing heat is necessary for raising thetemperature of the B-stage paste on the inactive surface of the seconddie.

The division line(s) on the active surface of the semiconductor is/arenot always necessary for applying the dividing step to thesemiconductor. As long as the image of the semiconductor (specificallythe image of the active surface of the semiconductor) appearing via thetransparent material can be recognized, the semiconductor can be divided(or diced) according to the image of the semiconductor seen from thetransparent material, to obtain a smaller semiconductor having at leastpart of the transparent material and at least part of the stickingmaterial thereon. Accordingly a further aspect of the process providedby the present invention comprises:

sticking transparent material to an active surface of a semiconductorvia one type of sticking material; grinding the semiconductor from aninactive surface thereof to obtain a new inactive surface of thesemiconductor, the distance between the new inactive surface and theactive surface of the semiconductor being smaller than an initialthickness of the semiconductor; dividing the semiconductor according tothe image of the semiconductor seen from the transparent material, toobtain a smaller semiconductor (e.g., die or chip) having at least partof the transparent material and at least part of the sticking materialthereon, i.e., to obtain a smaller semiconductor which is part of thesemiconductor but separated from the semiconductor, and which still hasat least part of the transparent material and at least part of thesticking material thereon. To remove the transparent material and thesticking material from the smaller semiconductor, apply one type oflight to the sticking material which is on the smaller semiconductor, tomake the sticking material lose capability of sticking to the smallersemiconductor, thereby the transparent material and the stickingmaterial can be easily separated from the smaller semiconductor. Thetype of light is applied to the sticking material preferably via thetransparent material, and the sticking material either is itself a gluelayer or includes a glue layer, wherein the glue layer is characterizedby losing capability of sticking to the active surface of the smallersemiconductor in response to receiving the type of light. The glue layeris preferably made of UV glue (ultraviolet-ray glue), and the type oflight is preferably ultraviolet ray.

The present invention may best be understood through the followingdescription with reference to the accompanying drawings, in which:

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 a-1 f show the steps disclosed according to prior arts.

FIGS. 2-4 show some aspects of prior arts to be improved.

FIGS. 5 a-5 c show another prior art.

FIGS. 6 a-6 h show a process representing an embodiment providedaccording to the present invention.

FIGS. 7 a-7 c show some steps provided according to the presentinvention, and following the process described by FIGS. 6 a-6 h.

FIGS. 8 a-8 c show a process representing an embodiment providedaccording to the present invention for stacking plural dice or chips.

FIG. 9 shows a structure representing an embodiment of the stickingmaterial used in the process provided according to the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIGS. 6 a-6 h show an embodiment representing a first aspect of theprocess provided according to the present invention. The process is forapplying to a semiconductor 60 including an active surface 61 and aninactive surface 62, wherein the distance between the active surface 61and the inactive surface 62 defines an initial thickness 63 of thesemiconductor. The process comprises: sticking transparent material 64(e.g., glass, plastic, etc) to the active surface 61 of thesemiconductor 60; grinding (e.g., using a grinding machine 30 to grind)the semiconductor 60 from the inactive surface 62 to obtain a newinactive surface 65 of the semiconductor 60, with the distance 70between the new inactive surface 65 and the active surface 61 smallerthan the initial thickness 63, i.e., the semiconductor 60 becomesthinner; and applying a dividing step to the semiconductor 60 via thetransparent material 64 (e.g., applying a sawing machine 40 toward thetransparent material 64 to cut the semiconductor 60) to obtain at leasta first die 66 or smaller semiconductor (e.g., chip or plural dice orplural chips), wherein the first die 66 includes an active surface 67and an inactive surface 68, the active surface 67 of the first die 66 ispart of the active surface 61 of the semiconductor, the inactive surface68 of the first die 66 is part of the new inactive surface 65 of thesemiconductor 60, and the active surface 67 of the first die 66 has atleast part of the transparent material 64 thereon, i.e., there is partof transparent material 64 sticking to the active surface 67 of thefirst die 66. Preferably, the semiconductor 60 is placed on a grindingsupporter (not shown in figures) before being ground, and placed on asawing supporter (not shown in figures) before being divided (or diced).

One way to stick the transparent material 64 to the active surface 61 ofthe semiconductor 60, is that one type of sticking material 69 is spreadbetween the transparent material 64 and the active surface 61 of thesemiconductor 60, or that the transparent material 64 and/or the activesurface 61 of the semiconductor 60 are/is coated with sticking material69, wherein the sticking material 69 is so characterized as to losecapability of sticking to the active surface 61 when receiving one typeof light (e.g., ultraviolet light). Taking advantage of transparency ofthe transparent material 64, it is assured the type of light can easilyreach the sticking material 69 which is between the transparent material64 and the active surface 61 of the semiconductor 60 (i.e., between thetransparent material 64 and the active surface 67 of the first die 66),thereby make the sticking material 69 lose capability of sticking to theactive surface 61 of the semiconductor 60 (i.e., lose capability ofsticking to the active surface 67 of the first die 66), thus thetransparent material 64 and the sticking material 69 can be easilyremoved from the first die 66. An example of moving die 66 together withtransparent material 64 and the sticking material 69 is shown in FIG. 6g. According to FIG. 6 g, a pick-up head 74 is used to move the firstdie 66 together with the transparent material 64 onto a device carrier71 (provided as shown in FIG. 6 h), with the inactive surface 68 of thefirst die 66 connecting (or sticking to) a certain portion of the devicecarrier 71 (e.g., the first die 66 connecting a surface 76 or part ofthe surface 76 of device carrier 71), the type of light 72 (as shown inFIG. 7 a) is applied to sticking material 69 (by means of transparencyof the transparent material 64, light 72 can easily pass transparentmaterial 64 to reach the sticking material 69), and sticking material 69is turned to lose capability of sticking to the active surface 67 of thefirst die 66, thus the transparent material 64 and the sticking material69 can be conveniently removed from the first die 66, with the first die66 still on (or sticking to) the device carrier 71.

One way of connecting the first die 66 to the device carrier 71, is tocoat surface 76 (or a certain portion of surface 76) of device carrier71 and/or inactive surface 68 of first die 66 with an adhesive 75 (e.g.,silver paste, or nonconductive paste, or B-stage paste), as shown inFIGS. 6 h, 7 a, and 7 b. In case adhesive 75 is B-stage paste, heat mustbe provided to raise the temperature of the B-stage paste, in order tolet the B-stage paste capable of providing adhesion.

In the process according to FIGS. 7 a-7 c, plural dice 66 (or chips)obtained from the steps of thinning and dividing semiconductor 60 (asdescribed in FIGS. 6 a-6 h), are attached to (e.g., with inactivesurface stuck to) device carrier 71; and ultraviolet rays 72 are appliedto sticking material 69 via transparent material 64, to make stickingmaterial 69 lose capability of sticking to active surface 67 of eachfirst die 66; a pick-up head 74 is then used to remove transparentmaterial 64 and sticking material 69 from each first die 66.

FIG. 8 a shows a step of stacking plural dice (or chips). In the stepaccording to FIG. 8 a, the first die 66 (or chip) obtained from thesteps of thinning and dividing semiconductor 60 (described in FIGS. 6a-6 h), is attached to (e.g., with its inactive surface stuck to) devicecarrier 71; and a second die 86 (or chip) also obtained from the stepsas described in FIGS. 6 a-6 h, is attached to (e.g., with its inactivesurface of second die 86 stuck to) active surface 67 of first die 66 (itmust be noted both the transparent material 64 and sticking material 69have been removed from first die 66, as can be seen from FIG. 7 b or 7c). The second die 86 also includes an active surface 67 and an inactivesurface 68, wherein the active surface 67 of the second die 86 is partof the active surface 61 of the semiconductor 60 (as can be seen fromFIGS. 6 a-6 f), the inactive surface 68 of the second die 86 is part ofthe new inactive surface 65 of the semiconductor 60 (also as can be seenfrom FIGS. 6 a-6 f), and the active surface 67 of the second die 86 alsohas at least part of the transparent material 64 thereon (again also canbe seen from FIGS. 6 a-6 f).

The second die 86 according to FIG. 8 a is stuck to the active surface67 of first die 66 by using an adhesive 85 (e.g., silver paste, ornonconductive paste, or B-stage paste), i.e., before second die 86 isattached to the active surface 67 of first die 66, active surface 67 offirst die 66 and/or inactive surface 68 of second die 86 are/is coatedwith adhesive 85. As long as second die 86 can be stuck to first die 66,only part of active surface 67 of first die 66 and/or part of inactivesurface 68 of second die 86 need/needs to be coated with adhesive 85. Incase adhesive 85 is the same as adhesive 75, i.e., is B-stage paste,heat must be provided to raise the temperature of adhesive 85, in orderto let the adhesive 85 capable of providing adhesion.

What is shown in FIG. 8 b results from the step as shown in FIG. 8 a.According to FIG. 8 b, ultraviolet rays 77, analogue with light 72 asshown in FIG. 7 a, are applied to sticking material 69 (i.e., applied tothe material 69 sticking to active surface 67 of second die 86) viatransparent material 64, in order to make sticking material 69 losecapability of sticking to active surface 67 of second die 86. A pick-uphead 74, as shown in FIG. 8 c, is then used to remove transparentmaterial 64 and sticking material 69 from second die 86 (i.e., fromactive surface 67 of second die 86).

Alternatively, in the process provided according to the presentinvention, if the new inactive surface 65 (65 is shown in FIG. 6 d, but75 and 85 not) is coated with adhesive 75 (or 85) right aftersemiconductor 60 is thinned (e.g., after semiconductor 60 is ground bygrinding machine 30, as shown in FIG. 60 d) but before semiconductor 60is divided, then the inactive surface 68 of each of the plural dice orchips (such as first die 66 in FIG. 6 f and second die 86 in FIG. 8 a)obtained from dividing semiconductor 60, will otherwise all haveadhesive 75 (or 85) thereon, thereby the inactive surface 68 of firstdie 66 can be stuck to device carrier 71 by means of adhesive 75 (or85), and the inactive surface 68 of second die 86 can be stuck to theactive surface 67 of first die 66 also by means of adhesive 75 (or 85),as shown in FIG. 8 c.

Both adhesive 75 and adhesive 85 shown in FIGS. 8 a-8 c may includesilver paste and/or nonconductive paste and/or B-stage paste. Ifadhesive 75 and adhesive 85 are B-stage paste or include B-stage paste,heat must be provided to raise their temperature after first die 66 isattached to device carrier 71 and second die 86 is attached to first die66. The heat is to make adhesive 75 and adhesive 85 capable of providingadhesion.

An embodiment of sticking material 69 is shown in FIG. 9. The stickingmaterial 69 according to FIG. 9 is a slice of ultraviolet film (UV film)including a first glue layer 81, a second glue layer 82, and a filmlayer 83, wherein the first glue layer 81 contacts the transparentmaterial 64, the second glue layer 82 contacts the active surface of thesemiconductor (e.g., active surface 61 of semiconductor 60, activesurface 67 of first die 66 and second die 86), the film layer 83 isbetween the first glue layer 81 and the second glue layer 82, both thefilm layer 83 and the first glue layer 81 are capable of letting onetype of light (e.g., ultraviolet ray) pass therethrough; the second gluelayer 82 is made of ultraviolet paste (UV paste) which, in response toultraviolet light applied thereto, will lose capability of providingadhesion. For example, when receiving ultraviolet rays 92, the secondglue layer 82 loses capability of providing adhesion, i.e., whenultraviolet rays 92 reach second glue layer 82, the second glue layer 82loses capability of providing adhesion, and the sticking material 69loses capability of sticking to the active surface of the semiconductor(e.g., active surface 67 of first die 66 or second die 86, or activesurface 61 of semiconductor 60), thereby the transparent material 64 andthe sticking material 69 can be easily removed from the active surface(e.g., active surface 67 of first die 66 or second die 86, or activesurface 61 of semiconductor 60). Preferably the ultraviolet rays 92reach second glue layer 82 by passing transparent material 64, firstglue layer 81, and the film layer 83.

While the invention has been described in terms of what are presentlyconsidered to be the most practical or preferred embodiments, it shallbe understood that the invention is not limited to the disclosedembodiment. On the contrary, any modifications or similar arrangementsshall be deemed covered by the spirit of the present invention.

1. A process applied to a semiconductor wherein said semiconductorincludes an active surface and an inactive surface, the distance betweensaid active surface and said inactive surface defines an initialthickness of said semiconductor, said process comprising: stickingtransparent material to said active surface; grinding said semiconductorfrom said inactive surface to obtain a new inactive surface, thedistance between said new inactive surface and said active surface beingsmaller than said initial thickness; and applying a dividing step tosaid semiconductor via said transparent material to obtain at least afirst die, said first die including an active surface and an inactivesurface, said active surface being part of said active surface, saidinactive surface being part of said new inactive surface, and saidactive surface having at least part of said transparent materialthereon.
 2. The process according to claim 1 further comprising: beforegrinding said semiconductor, placing said semiconductor together withsaid transparent material on a grinding supporter, with said inactivesurface exposed; and before applying said dividing step, placing saidsemiconductor together with said transparent material on a dividingsupporter, with said inactive surface facing said dividing supporter andwith said transparent material exposed.
 3. The process according toclaim 1 wherein one type of sticking material is spread between saidtransparent material and said active surface for sticking saidtransparent material to said active surface, said sticking materiallosing capability of sticking to said active surface when receiving onetype of light.
 4. The process according to claim 3 further comprising:letting said type of light reach said sticking material to make saidsticking material lose capability of sticking to said active surface;and removing said transparent material and said sticking material fromsaid first die.
 5. The process according to claim 3 further comprising:moving said first die together with said transparent material onto adevice carrier, with said inactive surface connecting said devicecarrier; letting said type of light reach said sticking material viasaid transparent material, to make said sticking material lose thecapability of sticking to said active surface; and removing saidtransparent material and said sticking material from said first die. 6.The process according to claim 3 wherein said type of light isultraviolet ray.
 7. The process according to claim 1 wherein saidtransparent material includes at least one type of material selectedfrom glass and plastic.
 8. The process according to claim 1 wherein saiddividing step comprises: recognizing via said transparent material atleast a division line on said active surface; and dividing saidsemiconductor according to said division line.
 9. The process accordingto claim 5 further comprising: obtaining at least a second die by saiddividing step, said second die including an active surface and aninactive surface, the active surface of said second die being anotherpart of said active surface, the inactive surface of said second diebeing another part of said new inactive surface, and the active surfaceof said second die having at least part of said transparent materialthereon; sticking the inactive surface of said second die to the activesurface of said first die; letting said type of light pass saidtransparent material to reach said sticking material which is betweensaid transparent material and said second die, thereby making saidsticking material lose the capability of sticking to said second die;and removing said transparent material and said sticking material fromsaid second die.
 10. The process according to claim 5 furthercomprising, before the inactive surface of said first die connects saiddevice carrier, spreading an adhesive onto at least one selected frombetween a surface of said device carrier and the inactive surface ofsaid first die, wherein said adhesive includes at least one type ofmaterial selected from between silver paste, nonconductive paste, andB-stage paste.
 11. The process according to claim 9 further comprising:before sticking the inactive surface of said second die to said firstdie, spreading an adhesive onto at least one selected from between theinactive surface of said second die and the active surface of said firstdie.
 12. The process according to claim 11 wherein said adhesiveincludes at least one type of material selected from between silverpaste, nonconductive paste, and B-stage paste.
 13. The process accordingto claim 3 further comprising: providing a device carrier; spreadingB-stage paste onto at least one selected from between a connectionsurface of said device carrier and the inactive surface of said firstdie; placing said first die on said device carrier, with the inactivesurface of said first die connecting the connection surface of saiddevice carrier via said B-stage paste. providing heat to raise thetemperature of said B-stage paste, so that said B-stage paste becomescapable of sticking the inactive surface of said first die to theconnection surface of said device carrier; letting said type of lightpass said transparent material to reach said sticking material, so thatsaid sticking material loses capability of sticking to the activesurface of said first die; and removing said transparent material andsaid sticking material from said first die.
 14. The process according toclaim 13 further comprising: obtaining at least a second die by saiddividing step, said second die including an active surface and aninactive surface, the active surface of said second die being anotherpart of said active surface, the inactive surface of said second diebeing another part of said new inactive surface, the active surface ofsaid second die having at least part of said transparent materialthereon; spreading B-stage paste onto at least one selected from betweenthe inactive surface of said second die and the active surface of saidfirst die; before providing heat, letting the inactive surface of saidsecond die connect the active surface of said first die via said B-stagepaste; letting said type of light pass said transparent material toreach said sticking material which is between said transparent materialand said second die, thereby making said sticking material lose thecapability of sticking to said second die; removing said transparentmaterial and said sticking material from said second die.
 15. A processapplied to a semiconductor wherein said semiconductor includes an activesurface and an inactive surface, the distance between said activesurface and said inactive surface defines an initial thickness of saidsemiconductor, said process comprising: sticking transparent material tosaid active surface; grinding said semiconductor from said inactivesurface to obtain a new inactive surface, the distance between said newinactive surface and said active surface being smaller than said initialthickness; spreading B-stage paste onto said new inactive surface;applying a dividing step to said semiconductor via said transparentmaterial to obtain at least a first die, said first die including anactive surface and an inactive surface, said active surface being partof said active surface, said inactive surface being part of said newinactive surface, said active surface having at least part of saidtransparent material thereon, and said inactive surface having saidB-stage paste thereon; placing said first die together with saidtransparent material on a device carrier, with the inactive surface ofsaid first die connecting said device carrier via said B-stage paste;providing heat to raise the temperature of said B-stage paste, so thatsaid B-stage paste becomes capable of sticking the inactive surface ofsaid first die to said device carrier; letting said type of light passsaid transparent material to reach said sticking material, so that saidsticking material loses capability of sticking to the active surface ofsaid first die; and removing said transparent material and said stickingmaterial from said first die.
 16. The process according to claim 15further comprising: obtaining at least a second die by said dividingstep, said second die including an active surface and an inactivesurface, the active surface of said second die being another part ofsaid active surface and the inactive surface of said second die beinganother part of said new inactive surface, the active surface of saidsecond die having at least part of said transparent material thereon,and the inactive surface of said second die having at least part of saidB-stage paste thereon; before providing heat, letting the inactivesurface of said second die connect the active surface of said first dievia said B-stage paste; letting said type of light pass said transparentmaterial to reach said sticking material which is between saidtransparent material and said second die, so that said sticking materialloses capability of sticking to the active surface of said second die;and removing said transparent material and said sticking material fromsaid second die.
 17. A process applied to a semiconductor wherein saidsemiconductor includes an active surface and an inactive surface, thedistance between said active surface and said inactive surface definesan initial thickness of said semiconductor, said process comprising:sticking transparent material to said active surface via one type ofsticking material; grinding said semiconductor from said inactivesurface to obtain a new inactive surface, the distance between said newinactive surface and said active surface being smaller than said initialthickness; dividing said semiconductor according to an image of saidsemiconductor seen from said transparent material, to obtain a smallersemiconductor, said smaller semiconductor having at least part of saidtransparent material and at least part of said sticking materialthereon.
 18. The process according to claim 17 further comprising:applying one type of light to said sticking material which is on saidsmaller semiconductor, so that said sticking material loses capabilityof sticking to said smaller semiconductor, and removing said transparentmaterial and said sticking material from said smaller semiconductor. 19.The process according to claim 18 wherein said sticking materialincludes a glue layer which, in response to receiving said type oflight, loses capability of sticking to said smaller semiconductor. 20.The process according to claim 19 wherein said glue layer includesultraviolet paste, and said type of light is ultraviolet ray.